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Package SOIC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 2N-CH 20V 10A/12A 8-SOIC
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case SOIC

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 10V

Compliance

RoHS Status RoHS Compliant

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