Capacitance - Input 750pF
Drain to Source Resistance 600mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 22.8A
Drain to Source Breakdown Voltage 560V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.6A
Turn-Off Delay Time 60 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 560V
Halogen Free Halogen Free
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 32W
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C