EPC8009
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET TRANS 65V 2.7A BUMPED DIE
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Buying Options
Total Price: USD $3.09
Unit Price: USD $3.0888
≥1 USD $3.0888
≥10 USD $2.59072
≥100 USD $2.095808
≥500 USD $1.862925
≥1000 USD $1.595132
Inventory: 1166
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V
Drain to Source Voltage (Vdss) 65V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 2.7A
Input Capacitance 52pF
Rds On Max 130 mΩ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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