EPC2038
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GAN TRANS 100V 2.8OHM BUMPED DIE
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.2056
≥1 USD $1.2056
≥10 USD $0.98384
≥100 USD $0.765248
≥500 USD $0.648648
≥1000 USD $0.528387
Inventory: 67859
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
Number of Channels 1
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 8.4pF @ 50V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.044nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 2.1Ohm
Dimensions
Height 815μm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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