EPC2034
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 200V 48A BUMPED DIE
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 48A Ta
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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