EPC2025
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 300V 150MO BUMPED DIE
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Rds On Max 150 mΩ
Input Capacitance 194pF
Continuous Drain Current (ID) 4A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Input Capacitance (Ciss) (Max) @ Vds 194pF @ 240V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 150mOhm @ 3A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series eGaN?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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