EPC2022
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GAN TRANS 100V 3MOHM BUMPED DIE
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Buying Options
Total Price: USD $7.89
Unit Price: USD $7.8936
≥1 USD $7.8936
≥10 USD $6.7628
≥100 USD $5.635872
≥500 USD $4.972845
Inventory: 1174
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Rds On Max 3.2 mΩ
Input Capacitance 1.5nF
Continuous Drain Current (ID) 60A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 12mA
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2016
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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