EPC2021ENGR
RoHS
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Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 80V 60A BUMPED DIE
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Inventory: 6168
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Rds On Max 2.5 mΩ
Input Capacitance 1.7nF
Continuous Drain Current (ID) 60A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Vgs(th) (Max) @ Id 2.5V @ 14mA
Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series eGaN?
Published 2012
Packaging Cut Tape (CT)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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