EPC2019
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GAN TRANS 200V 8.5A BUMPED DIE
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Buying Options
Total Price: USD $2.98
Unit Price: USD $2.97754
≥1 USD $2.97754
≥10 USD $2.809
≥100 USD $2.65
≥500 USD $2.5
≥1000 USD $2.35849
≥3000 USD $2.22499
Inventory: 18193
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Rds On Max 50 mΩ
Input Capacitance 270pF
Continuous Drain Current (ID) 8.5A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V
Vgs(th) (Max) @ Id 2.5V @ 1.5mA
Rds On (Max) @ Id, Vgs 50mOhm @ 7A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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