EPC2016C
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET TRANS 100V 18A BUMPED DIE
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Buying Options
Total Price: USD $2.28
Unit Price: USD $2.2792
≥1 USD $2.2792
≥10 USD $1.89464
≥100 USD $1.50788
≥500 USD $1.275877
≥1000 USD $1.082558
Inventory: 100522
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Height 815μm
Technical
Rds On Max 16 mΩ
Drain to Source Resistance 12mOhm
Max Junction Temperature (Tj) 150°C
Input Capacitance 420pF
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) 18A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Rds On (Max) @ Id, Vgs 16mOhm @ 11A, 5V
FET Type N-Channel
Number of Channels 1
Technology GaNFET (Gallium Nitride)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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