Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id 2.5V @ 9mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 33A Ta
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V
Continuous Drain Current (ID) 33A