EPC2014
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 40V 10A BUMPED DIE
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Technical Details
Technical
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 10A
Input Capacitance 325pF
Rds On Max 16 mΩ
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series eGaN?
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -40°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Supplier Device Package Die Outline (5-Solder Bar)
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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