EPC2010C
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET TRANS 200V 22A BUMPED DIE
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Buying Options
Total Price: USD $5.77
Unit Price: USD $5.7728
≥1 USD $5.7728
≥10 USD $4.95
≥100 USD $4.124912
≥500 USD $3.639645
≥1000 USD $3.275677
Inventory: 1441
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die Outline (7-Solder Bar)
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 22A
Input Capacitance 540pF
Rds On Max 25 mΩ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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