DMT5015LFDF-13
RoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
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Buying Options
Total Price: USD $3.26
Unit Price: USD $3.25945
≥1 USD $3.25945
≥10 USD $2.67425
≥100 USD $2.59065
≥500 USD $2.50705
≥1000 USD $2.42345
Inventory: 1082
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 15mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 820mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 902.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.1A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 5.1ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 10.6 ns
Continuous Drain Current (ID) 9.1A
Gate to Source Voltage (Vgs) 16V
DS Breakdown Voltage-Min 50V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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