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DMS3012SFG-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 3V 12A 8-Pin PowerDI T/R
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 1153
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 10mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 890mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 14.7nC @ 10V
Rise Time 27.8 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.6 ns
Turn-Off Delay Time 29.7 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.5A
DS Breakdown Voltage-Min 30V
FET Feature Schottky Diode (Body)

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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