DS Breakdown Voltage-Min 50V
Drain-source On Resistance-Max 8Ohm
Drain Current-Max (Abs) (ID) 0.18A
Continuous Drain Current (ID) 180mA
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Input Capacitance (Ciss) (Max) @ Vds 27pF @ 25V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 8 Ω @ 100mA, 5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Max Power Dissipation 470mW
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)