Feedback Cap-Max (Crss) 20 pF
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 0.6A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -600mA
Turn-Off Delay Time 20.2 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 16V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 900m Ω @ 430mA, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 550mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ