DMP1022UFDF-7
RoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 12V 9.5A U-DFN2020-6
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Buying Options
Total Price: USD $0.46
Unit Price: USD $0.4576
≥1 USD $0.4576
≥10 USD $0.39248
≥100 USD $0.273152
≥500 USD $0.213259
≥1000 USD $0.173342
Inventory: 1114
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Capacitance 2.712nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Base Part Number DMP1022
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 730mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.3m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2712pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 48.3nC @ 8V
Rise Time 39.8ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 147 ns
Turn-Off Delay Time 141 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage -12V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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