DMN65D8LFB-7
RoHS 
RoHS compliant
RoHS compliantPackage 3-UFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 260MA 3DFN
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Buying Options
Total Price: USD $0.29
Unit Price: USD $0.2904
≥1 USD $0.2904
≥10 USD $0.198
≥100 USD $0.096624
≥500 USD $0.080573
≥1000 USD $0.055977
Inventory: 1335
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Physical
Mounting Type Surface Mount
Package / Case 3-UFDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 430mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.4A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 60V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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