Pulsed Drain Current-Max (IDM) 46.5A
Drain-source On Resistance-Max 0.024Ohm
Drain Current-Max (Abs) (ID) 9.78A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14.4A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.78A Ta
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Transistor Application SWITCHING
Turn On Delay Time 2.9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.17W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ