Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Power Dissipation-Max 610mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11.67 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Turn-Off Delay Time 35.89 ns
Continuous Drain Current (ID) 6.9A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.02Ohm
DS Breakdown Voltage-Min 20V