DMG9N65CT
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 9A TO220AB
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Buying Options
Total Price: USD $11.89
Unit Price: USD $11.8921
≥1 USD $11.8921
≥10 USD $9.7584
≥100 USD $9.45345
≥500 USD $9.1485
≥1000 USD $8.84355
Inventory: 1136
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Drain to Source Breakdown Voltage 650V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 122 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 29 ns
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 39 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 165W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e3
Published 2015
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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