CPMF-1200-S160B
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Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 1200V 28A DIE
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case Die
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series Z-FET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 202W Tj
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220m Ω @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 928pF @ 800V
Current - Continuous Drain (Id) @ 25°C 28A Tj
Gate Charge (Qg) (Max) @ Vgs 47.1nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -5V
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