Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 78W Tc
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 3.1V @ 500μA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 20V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Continuous Drain Current (ID) 5.3A
Drain to Source Resistance 1Ohm
Operating Temperature -55°C~150°C TJ