Drain to Source Resistance 160mOhm
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 20V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 527pF @ 800V
Vgs(th) (Max) @ Id 2.5V @ 500μA
Rds On (Max) @ Id, Vgs 196mOhm @ 10A, 20V
Element Configuration Single
Power Dissipation-Max 125W Tc
Technology SiCFET (Silicon Carbide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ