C2M0080120D
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
PDF
/
Buying Options
Total Price: USD $25.73
Unit Price: USD $25.7312
≥1 USD $25.7312
≥10 USD $21.3312
≥100 USD $19.998
≥500 USD $17.06496
Inventory: 1114
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
Series C2M?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 192W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Turn-Off Delay Time 23.2 ns
Continuous Drain Current (ID) 31.6A
Threshold Voltage 3.2V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 950pF
Drain to Source Resistance 80mOhm
Rds On Max 98 mΩ
Nominal Vgs 1.7 V
Dimensions
Height 21.1mm
Length 16.13mm
Width 5.21mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
C2M0080120D+price,C2M0080120D+datasheet,C2M0080120D+in stock,buy+C2M0080120D,finder+C2M0080120D,C2M0080120D+tutorials,C2M0080120D+download