Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Max Operating Temperature 150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 520W Tc
Rds On (Max) @ Id, Vgs 70mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 18mA
Input Capacitance (Ciss) (Max) @ Vds 3672pF @ 1kV
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 188nC @ 20V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Continuous Drain Current (ID) 72A
Drain to Source Resistance 45mOhm