Drain to Source Resistance 25mOhm
Input Capacitance 2.788nF
Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 90A
Turn-Off Delay Time 28.8 ns
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 161nC @ 20V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 2788pF @ 1000V
Vgs(th) (Max) @ Id 2.4V @ 10mA
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
Turn On Delay Time 14.4 ns
Element Configuration Single
Power Dissipation-Max 463W Tc
Technology SiCFET (Silicon Carbide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ