CTLDM7590 TR
RoHS
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Package 3-XFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 0.14A TLM3D6D8
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.4664
≥1 USD $0.4664
≥10 USD $0.39864
≥100 USD $0.277288
≥500 USD $0.216515
≥1000 USD $0.175982
≥3000 USD $0.157318
Inventory: 1284
Minimum: 1
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Technical Details
Technical
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 5Ohm
Drain Current-Max (Abs) (ID) 0.14A
Vgs (Max) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 140mA Ta
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PBCC-N3
Reach Compliance Code compliant
Terminal Form NO LEAD
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
HTS Code 8541.21.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2014
Packaging Cut Tape (CT)
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 3-XFDFN
Mounting Type Surface Mount
Alternative Model
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