CTLDM3590 TR
RoHS
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Package 3-XFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 0.16A TLM3D6D8
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.138653
≥1 USD $0.138653
≥10 USD $0.13545
≥100 USD $0.13119
Inventory: 1162
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 3-XFDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9pF @ 15V
Current - Continuous Drain (Id) @ 25°C 160mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.46nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) 8V
Drain Current-Max (Abs) (ID) 0.16A
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 20V
Alternative Model
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