Operating Temperature -65°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 16V
Current - Continuous Drain (Id) @ 25°C 860mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.56nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain Current-Max (Abs) (ID) 0.86A
Drain-source On Resistance-Max 0.15Ohm
DS Breakdown Voltage-Min 20V