CEDM8001VL TR
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥10 USD $0.114
≥100 USD $0.1102
≥500 USD $0.1064
≥1000 USD $0.10355
≥10000 USD $0.09215
Inventory: 1261
Minimum: 1
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Technical Details
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 12Ohm
Drain Current-Max (Abs) (ID) 0.1A
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PBCC-N3
Reach Compliance Code compliant
Terminal Form NO LEAD
Terminal Position BOTTOM
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
ECCN Code EAR99
Physical
Transistor Element Material SILICON
Number of Terminals 3
Surface Mount YES
Alternative Model
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