Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 3430pF @ 50V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 20A, 10V
Power Dissipation-Max 2.1W Ta 267W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ