AOU4S60
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 4A TO251
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Buying Options
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Inventory: 71095
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series aMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 56.8W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 263pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.9Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 77 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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