Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 60A
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 50V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Rds On (Max) @ Id, Vgs 15.8m Ω @ 20A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.6W Ta 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ