FET Feature Schottky Diode (Body)
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 32A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Ta 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 15V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Rds On (Max) @ Id, Vgs 3.6m Ω @ 20A, 10V
Power Dissipation-Max 3.1W Ta 70W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ