AON7432
RoHS
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Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10.5A 8DFN
PDF
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Buying Options
Total Price: USD $27.09
Unit Price: USD $27.08545
≥1 USD $27.08545
≥10 USD $22.2243
≥100 USD $21.52985
≥500 USD $20.8354
≥1000 USD $20.14095
Inventory: 1129
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 20.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 20.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 813pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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