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RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans Mosfet N-ch 30V 25A 8-PIN Dfn-a Ep
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.396
≥1 USD $0.396
≥10 USD $0.3036
≥100 USD $0.182424
≥500 USD $0.168872
≥1000 USD $0.114831
≥3000 USD $0.105714
Inventory: 41010
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 15.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 16.7W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 888pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V

Compliance

RoHS Status ROHS3 Compliant

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