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Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 11A 8DFN
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Buying Options
Total Price: USD $0.19
Unit Price: USD $0.1881
≥1 USD $0.1881
≥10 USD $0.15485
≥100 USD $0.1501
≥500 USD $0.14535
≥1000 USD $0.1406
≥5000 USD $0.1254
Inventory: 254834
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 29A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 15V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 25V
DS Breakdown Voltage-Min 30V

Compliance

RoHS Status ROHS3 Compliant

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