AON7401_101
RoHS
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Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH
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Inventory: 8441
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Technical
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.1W Ta 29W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
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