DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.0145Ohm
Continuous Drain Current (ID) 26A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta 26A Tc
Input Capacitance (Ciss) (Max) @ Vds 1452pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 12.5m Ω @ 10A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 35W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ