Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 40V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 6.3W Ta 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ