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RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 20A 8DFN
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Buying Options
Total Price: USD $1.45
Unit Price: USD $1.452
≥1 USD $1.452
≥10 USD $1.19064
≥100 USD $0.92576
≥500 USD $0.784696
≥1000 USD $0.639223
Inventory: 1168
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 40V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 83W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 6.3W Ta 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PDSO-F5
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerWDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 18 Weeks

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