Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 7.4W Ta 83W Tc
Rds On (Max) @ Id, Vgs 1.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3509pF @ 15V
Current - Continuous Drain (Id) @ 25°C 54A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 85A
Gate to Source Voltage (Vgs) 20V
FET Feature Schottky Diode (Body)