AON6312
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerSMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 30V 85A 8DFN
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Buying Options
Total Price: USD $0.92
Unit Price: USD $0.9152
≥1 USD $0.9152
≥10 USD $0.75152
≥100 USD $0.584232
≥500 USD $0.495194
≥1000 USD $0.403383
Inventory: 1175
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 260A
Drain-source On Resistance-Max 0.0025Ohm
Drain Current-Max (Abs) (ID) 130A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 1.85m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerSMD, Flat Leads
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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