Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 90W Tc
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 6.7m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Continuous Drain Current (ID) 70A
Drain-source On Resistance-Max 0.0085Ohm
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 125 mJ