Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type P-CHANNEL
Continuous Drain Current (ID) 10.5A
Drain-source On Resistance-Max 0.014Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Capacitance - Input 1.4nF