Power Dissipation-Max (Abs) 625W
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 125V
Transistor Type N-Channel
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Operating Temperature (Max) 200°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 3 (168 Hours)