Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 236W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Min Breakdown Voltage 65V