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Package M252
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube
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Technical Details

Physical

Mount Screw
Package / Case M252
Number of Pins 5

Technical

Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Voltage - Rated DC 65V
Min Breakdown Voltage 65V
Voltage - Test 32V
FET Technology METAL-OXIDE SEMICONDUCTOR
Input Capacitance 221pF
Drain to Source Breakdown Voltage 65V
Max Output Power 120W
Gain 16dB
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Current - Test 400mA
Case Connection SOURCE
Power Dissipation 236W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 2
JESD-30 Code R-PDFM-F4
Pin Count 4
Base Part Number SD56120
Frequency 860MHz
Current Rating 14A
Terminal Form FLAT
Max Power Dissipation 236W

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

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