Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Min Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 65V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 236W