SD56120
RoHS 
RoHS compliant
RoHS compliantPackage M246
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
Trans RF MOSFET N-CH 60V 14A 5-Pin Case M-246 Tube
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Technical Details
Technical
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Max Output Power 100W
Drain to Source Breakdown Voltage 65V
Input Capacitance 82pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Continuous Drain Current (ID) 14A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Current - Test 400mA
Case Connection SOURCE
Power Dissipation 217W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 2
JESD-30 Code R-PDFM-F4
Pin Count 4
Base Part Number SD56120
Frequency 860MHz
Current Rating 14A
Terminal Form FLAT
Max Power Dissipation 217W
Voltage - Rated DC 65V
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 200°C
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Number of Pins 5
Package / Case M246
Mount Screw
Supply Chain
Lifecycle Status NRND (Last Updated: 8 months ago)
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